Defects, Impurities and Doping Levels in Wide-Band-Gap Semiconductors
نویسنده
چکیده
A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities. The approach is illustrated with results for GaN.
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